Comparative study of epitaxial growth of Pt and Ir electrode films grown on MgO-buffered Si(100) by PLD

被引：0

作者：

T.L. Chen

X.M. Li

S. Zhang

X. Zhang

机构：

[1] Chinese Academy of Sciences,State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics

[2] Nanyang Technological University,School of Mechanical and Production Engineering

来源：

Applied Physics A | 2005年 / 80卷

关键词：

Thin Film; Surface Morphology; Operating Procedure; Electronic Material; Smooth Surface;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

(200)-oriented Pt and Ir electrode films have been epitaxially grown on MgO/Si(100) by in situ pulsed-laser deposition (PLD). A comparison of crystallinity and surface morphology of both electrode films was made. It was found that both electrode films featured remarkable atomic-scale smooth surfaces and had the same epitaxial relationship with substrates. Different from the noncompact surface morphology of the Pt film, the morphology of the Ir film offers a rectangular grain shape and the grains are arrayed regularly and compactly. The difference in the surface morphology of both electrode films is briefly explained in terms of the degree of species’ saturation.

引用

页码：73 / 76

页数：3