Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers

被引：0

作者：

Marcin Motyka

Grzegorz Sęk

Krzysztof Ryczko

Mateusz Dyksik

Robert Weih

Gilles Patriarche

Jan Misiewicz

Martin Kamp

Sven Höfling

机构：

[1] Wrocław University of Technology,Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology

[2] University of Würzburg,Technische Physik and Wilhelm

[3] Université Paris-Saclay,Conrad

[4] University of St. Andrews,Röntgen

来源：

Nanoscale Research Letters | 2015年 / 10卷

关键词：

Type II GaIn(As)Sb/GaSb; QW interface profile; Intermixing; Interband cascade lasers; FTIR spectroscopy; EDX spectra;

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学科分类号：

摘要：

The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga0.665In0.335AsxSb1 − x/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be blueshifted with increasing As content of the GaInAsSb layer, in contrast to the energy-gap-driven shifts calculated for an ideally rectangular QW profile. The arsenic incorporation into the hole-confining layer affects the material and optical structure also altering the InAs/GaInAsSb interfaces and their degree of intermixing. Based on the analysis of cross-sectional transmission electron microscopy images and energy-dispersive X-ray spectroscopy, we could deduce the composition distribution across the QW layers and hence simulate more realistic confinement potential profiles. For such smoothed interfaces that indicate As-enhanced intermixing, the energy level calculations have been able to reproduce the experimentally obtained trend.

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