Modulation of electron transfer in Si/SiO2/HfO2/Graphene by the HfO2 thickness

被引：0
作者：
Y. Ben Maad
A. Durnez
H. Ajlani
A. Madouri
M. Oueslati
A. Meftah
机构：
[1] University of Tunis El Manar,Faculty of Sciences of Tunis, Laboratory of Nanomaterials Nanotechnology and Energy (2NE)
[2] Centre de Nanosciences et de Nanotechnologies C2N,undefined
来源：
Applied Physics A | 2020年 / 126卷
关键词：
Graphene; HfO; Raman; Photoluminescence;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We studied by Raman spectroscopy the effect of the variation of the thickness of the HfO2 layer in Si/SiO2/HfO2/Graphene heterostructures on the density of carrier transferred to graphene. Three thicknesses of the HfO2 layer equal to 30, 20, and 5 nm were used. Analysis of the behavior of peaks G and 2D as well as the Raman intensity ratios ID/IG and I2D/IG shows that the density of carriers transferred to graphene increases when the thickness of the HfO2 layer decreases from 30 to 5 nm. Analysis of the photoluminescence (PL) spectra of Si/SiO2/HfO2 structures reveals the presence of bands associated with defects. These are essentially associated with oxygen vacancies in HfO2 and are responsible for the transfer of carriers to the graphene layer. The measured refractive index of HfO2 by ellipsometry shows an increase in the density of the defects in HfO2 with a decrease in its thickness in agreement with Raman results.
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