Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbide p-n structures

The spectral dependence of the temperature coefficient of the quantum efficiency of breakdown electroluminescence of alloyed p-n structures based on silicon carbide is investigated. A similarity is observed between the profiles of the spectral distributions of the temperature coefficient and the relative slope of the spectrum. These curves were found to have characteristic features that depend on the crystal modification of the as-grown material and the working voltage of the structure.