Weak carrier localization on the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document} $$(10\bar 10)$$ \end{document} tellurium surface

A theory of weak localization responsible for the negative magnetoresistance effect is developed for quantum wells at the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document} $$(10\bar 10)$$ \end{document} tellurium surface, which retains, in contrast to the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document} $$(\bar 12\bar 10)$$ \end{document} surface considered earlier, a trigonal spectrum distortion with opposite signs near the M and P extrema, with the latter playing the part of states with opposite spins. It is shown that as a result of the motion in momentum and spin spaces being correlated the spin relaxation due to this distortion is smaller than that for the (0001) surface.