Study of phase transformations in silicon by scanning tunneling spectroscopy and nanoindentation

被引：0
作者：
O. G. Lysenko
S. N. Dub
V. I. Grushko
E. I. Mitskevich
G. N. Tolmacheva
机构：
[1] National Academy of Sciences of Ukraine,Bakul Institute for Superhard Materials
[2] Kharkiv Institute of Physics and Technology,National Scientific Center
来源：
Journal of Superhard Materials | 2013年 / 35卷
关键词：
silicon; scanning tunneling microscopy; nanoscratching; nanoindentation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The results have been reported of the experiments on nanoscratching and nanoindentation of the surface of silicon using scanning tunneling microscope equipped with diamond semiconducting probe. Physical phenomena in silicon occurring at various contact pressures have been discussed.
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页码：350 / 355
页数：5
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