Effect of surface modification by silicon ion beam on microstructure and chemical composition of near-surface layers of titanium nickelide

被引:7
作者
Psakh'E S.G. [1 ]
Lotkov A.I. [1 ]
Meisner S.N. [1 ]
Meisner L.L. [1 ]
Sergeev V.P. [1 ]
Sungatulin A.R. [1 ]
机构
[1] Institute of Strength Physics and Materials Science, Siberian Branch, Russian Academy of Sciences
来源
Inorganic Materials: Applied Research | 1600年 / Maik Nauka Publishing / Springer SBM卷 / 04期
关键词
electron backscatter diffraction; fragmentation of the near-surface microstructure; high-dose ion implantation; silicon; surface modification; titanium nickelide;
D O I
10.1134/S2075113313050134
中图分类号
学科分类号
摘要
Regularities of changes in chemical composition and microstructure of titanium nickelide upon high-dose ion-beam implantation of silicon into its surface were studied. It was shown that irradiation of a TiNi alloy with silicon ion beams results in formation of a surface oxide layer about six times thicker than that at the surface of the unirradiated alloy. The surface oxide layer of the ion-beam-modified alloy has an oxygen concentration which is ∼20% greater than that of the unmodified TiNi surface layer and lacks nickel, whose concentration is near zero to a sample depth of about 20 nm. Investigation of the near-surface region beneath the irradiated surface of TiNi samples by electron backscatter diffraction revealed that, under the action of a silicon ion beam, the near-surface region of individual B2-phase grains rising to the surface is fragmented with formation of a grain-subgrain structure with fragment (grain) sizes decreased down to 5 to 15 μm. It was suggested that grain orientation influences the observed effect. © 2013 Pleiades Publishing, Ltd.
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页码:457 / 463
页数:6
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