Quantum well based on graphene and narrow-gap semiconductors

被引：0
作者：
P. V. Ratnikov
A. P. Silin
机构：
来源：
Bulletin of the Lebedev Physics Institute | 2009年 / 36卷
关键词：
Dirac Equation; Interface State; LEBEDEV Physic Institute; Current Carrier; Silin;
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摘要：
The energy spectrum of a planar quantum well formed by two narrow-gap semiconductor strips with a graphene strip inserted between them was considered. It was shown that the gapless mode arises only in the case of inverted narrow-gap semiconductors. Taking into account the graphene specificity, the spin splitting of the energy spectrum of the asymmetric quantum well was calculated. Interface states and optical transitions were studied. It was shown that optical transitions are possible only with parity conservation.
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页码：34 / 43
页数：9
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