High Quality Graphene Grown by Sublimation on 4H-SiC (0001)

被引：0
|
作者：
A. A. Lebedev
V. Yu. Davydov
D. Yu. Usachov
S. P. Lebedev
A. N. Smirnov
I. A. Eliseyev
M. S. Dunaevskiy
E. V. Gushchina
K. A. Bokai
J. Pezoldt
机构：
[1] Ioffe Institute,
[2] Saint Petersburg State University,undefined
[3] ITMO University,undefined
[4] Technische Universität Ilmenau,undefined
来源：
Semiconductors | 2018年 / 52卷
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页码：1882 / 1885
页数：3
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