Luminescent Properties of ZnO Films Doped with Group-IB Acceptors

被引：36

作者：

Gruzintsev A.N. ^{[1
]}

Volkov V.T. ^{[1
]}

Khodos I.I. ^{[1
]}

Nikiforova T.V. ^{[1
]}

Koval'chuk M.N. ^{[1
]}

机构：

[1] Inst. Microlectron. Technol. High-P., Russian Academy of Sciences, Chernogolovka, Moscow oblast

来源：

Russian Microelectronics | 2002年 / 31卷 / 3期

关键词：

Energy Level; Electrical Property; Valence Band; Visible Region; Luminescent Property;

D O I：

10.1023/A:1015467204997

中图分类号：

学科分类号：

摘要：

It is shown by experiment that the doping of ZnO films with Group-IB acceptors - Cu, Ag, and Au - influences the photoluminescence spectra of the films as well as their electrical properties. Specifically, this reduces the emission in the UV region and intensifies it in the visible region. The respective distances of the Cu, Ag, and Au energy levels from the valence band are found to be 0.38, 0.20, and 0.45 eV.

引用

页码：200 / 205

页数：5

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