Hydrogen sensing characteristics of Pd-SiC schottky diode operating at high temperature

被引:0
作者
C. K. Kim
J. H. Lee
Y. H. Lee
N. I. Cho
D. J. Kim
W. P. Kang
机构
[1] Soonchunhyang University,Department of Electrical Engineering
[2] Sun Moon University,Department of Electronic Engineering
[3] Seoul National University,Department of Inorganic Materials Engineering
[4] Vanderbilt University,Department of Electrical and Computer Engineering
来源
Journal of Electronic Materials | 1999年 / 28卷
关键词
Adsorption; gas sensor; hydrogen; Pd; Schottky diode; SiC;
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中图分类号
学科分类号
摘要
A Pd-SiC Schottky diode for detection of hydrogen gas operating at high temperature was fabricated. Hydrogen-sensing behaviors of Pd-SiC Schottky diode have been analyzed as a function of hydrogen concentration and temperature by current-voltage (I-V) and ΔI-t methods under steady-state and transient conditions. The effect of hydrogen adsorption on the barrier height was investigated. Analysis of the steady-state kinetics using I-V method confirmed that the atomistic hydrogen adsorption process is responsible for the barrier height change in the diode.
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页码:202 / 205
页数:3
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