Hydrogen sensing characteristics of Pd-SiC schottky diode operating at high temperature

被引：0

作者：

C. K. Kim

J. H. Lee

Y. H. Lee

N. I. Cho

D. J. Kim

W. P. Kang

机构：

[1] Soonchunhyang University,Department of Electrical Engineering

[2] Sun Moon University,Department of Electronic Engineering

[3] Seoul National University,Department of Inorganic Materials Engineering

[4] Vanderbilt University,Department of Electrical and Computer Engineering

来源：

Journal of Electronic Materials | 1999年 / 28卷

关键词：

Adsorption; gas sensor; hydrogen; Pd; Schottky diode; SiC;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A Pd-SiC Schottky diode for detection of hydrogen gas operating at high temperature was fabricated. Hydrogen-sensing behaviors of Pd-SiC Schottky diode have been analyzed as a function of hydrogen concentration and temperature by current-voltage (I-V) and ΔI-t methods under steady-state and transient conditions. The effect of hydrogen adsorption on the barrier height was investigated. Analysis of the steady-state kinetics using I-V method confirmed that the atomistic hydrogen adsorption process is responsible for the barrier height change in the diode.

引用

页码：202 / 205

页数：3

共 15 条

[1]

Lundstrom I.(1975)undefined J. Appl. Phys. Lett. 26 55-55

[2]

Shivaraman M.S.(1993)undefined Sensors and Actuators B 15–16 19-19

[3]

Svensson C.(1997)undefined Sensors and Actuators B 45 183-183

[4]

Lundkvist L.(1994)undefined J. Electrochem. Soc. 141 2231-2231

[5]

Arbab A.(undefined)undefined undefined undefined undefined-undefined

[6]

Spetz A.(undefined)undefined undefined undefined undefined-undefined

[7]

Lundstrom I.(undefined)undefined undefined undefined undefined-undefined

[8]

Nakagomi S.(undefined)undefined undefined undefined undefined-undefined

[9]

Tobias P.(undefined)undefined undefined undefined undefined-undefined

[10]

Baranzahi A.(undefined)undefined undefined undefined undefined-undefined

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