On the electrostatics of double-gate and cylindrical nanowire MOSFETs

被引：0

作者：

Gnani E. ^{[1
]}

Reggiani S. ^{[1
]}

Rudan M. ^{[1
]}

Baccarani G. ^{[1
]}

机构：

[1] ARCES, DEIS, University of Bologna, I-40136 Bologna

来源：

Journal of Computational Electronics | 2005年 / 4卷 / 1-2期

关键词：

Cylindrical nanowire MOSFETs; Double-gate MOSFETs; Quantum effects; Semiconductor-device modeling;

D O I：

10.1007/s10825-005-7110-0

中图分类号：

学科分类号：

摘要：

In this work we investigate and compare the electrostatics of fully-depleted double-gate (DG) and cylindrical nanowire (CNW) MOSFETs accounting for quantum effects and, in doing so, we propose a new approach for the self-consistent solution of the Schrödinger-Poisson equations based on a rigorous time-independent perturbation method. This study leads to the conclusion that the cylindrical geometry is superior to the equivalent double-gate structure both in terms of the current ratio Ion/Ioff and the available voltage gain gm/go, indicating that both the subthreshold slope and the drain-induced barrier lowering (DIBL) are better controlled by the CNW-MOSFET. © 2005 Springer Science + Business Media, Inc.

引用

页码：71 / 74

页数：3

共 10 条

[1]

Yu B., Et al., FinFET scaling to 10 nm gate lenght, IEDM 2002 Tech. Digest, pp. 251-254, (2002)

[2]

Burenkov A., Et al., Corner effect in double and triple gate FinFETs, ESSDERC 2003 Proceedings, pp. 135-138, (2003)

[3]

Oh S.-H., Et al., 50 nm Vertical Replacement-Gate (VRG) pMOSFETs, IEDM 2000 Tech. Digest, pp. 65-68, (2000)

[4]

Auth C., Plummer J., Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's, IEEE Electron Device Letters, 18, pp. 74-76, (1997)

[5]

Oh S.-H., Et al., Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs, IEEE Electron Device Letters, 21, pp. 445-447, (2000)

[6]

Pokatilov E., Et al., Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures, J. Appl. Phys., 85, (1999)

[7]

Gnani E., Et al., A New Approach to the Self-Consistent Solution of the Schrodie

[8]

dinger-Poisson Equations in Nanowire MOSFETs, ESSDERC 2004 Proceedings, pp. 177-180, (2004)

[9]

Trellakis A., Et al., Iteration scheme for the solution of the two-dimensional Schrödinger-Poisson equations in quantum structures, J. Appl. Phys., 85, pp. 7880-7884, (1997)

[10]

Reggiani S., Et al., Surface mobility in silicon at large operating temperature, SISPAD 2002 Proceedings, pp. 15-20, (2002)

← 1 →