On the electrostatics of double-gate and cylindrical nanowire MOSFETs

被引：0
作者：
Gnani E. [1 ]
Reggiani S. [1 ]
Rudan M. [1 ]
Baccarani G. [1 ]
机构：
[1] ARCES, DEIS, University of Bologna, I-40136 Bologna
来源：
Journal of Computational Electronics | 2005年 / 4卷 / 1-2期
关键词：
Cylindrical nanowire MOSFETs; Double-gate MOSFETs; Quantum effects; Semiconductor-device modeling;
D O I：
10.1007/s10825-005-7110-0
中图分类号：
学科分类号：
摘要：
In this work we investigate and compare the electrostatics of fully-depleted double-gate (DG) and cylindrical nanowire (CNW) MOSFETs accounting for quantum effects and, in doing so, we propose a new approach for the self-consistent solution of the Schrödinger-Poisson equations based on a rigorous time-independent perturbation method. This study leads to the conclusion that the cylindrical geometry is superior to the equivalent double-gate structure both in terms of the current ratio Ion/Ioff and the available voltage gain gm/go, indicating that both the subthreshold slope and the drain-induced barrier lowering (DIBL) are better controlled by the CNW-MOSFET. © 2005 Springer Science + Business Media, Inc.
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页码：71 / 74
页数：3
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