A Memory Reliability Enhancement Technique for Multi Bit Upsets

被引:0
|
作者
Alexandre Chabot
Ihsen Alouani
Réda Nouacer
Smail Niar
机构
[1] Université Polytechnique Hauts-de-France,LAMIH, UMR CNRS
[2] CEA-LIST,IEMN, UMR CNRS
[3] Université Polytechnique Hauts-de-France,undefined
来源
Journal of Signal Processing Systems | 2021年 / 93卷
关键词
Reliability; MBU; Fault injection; Memory;
D O I
暂无
中图分类号
学科分类号
摘要
Technological advances allow the production of increasingly complex electronic systems. Nevertheless, technology and voltage scaling increased dramatically the susceptibility of new devices not only to Single Bit Upsets (SBU), but also to Multiple Bit Upsets (MBU). In safety critical applications, it is mandatory to provide fault-tolerant systems, providing high reliability while meeting applications requirements. The problem of reliability is particularly expressed within the memory which represents more than 80 % of systems on chips. To tackle this problem we propose a new memory reliability techniques referred to as DPSR: Double Parity Single Redundancy. DPSR is designed to enhance computing systems resilience to SBU and MBU. Based on a thorough fault injection experiments, DPSR shows promising results; It detects and corrects more than 99.6 % of encountered MBU and has an average time overhead of less than 3 %.
引用
收藏
页码:439 / 459
页数:20
相关论文
共 50 条
  • [41] A Reliability-Aware Multi-Application Mapping Technique in Networks-on-Chip
    Khalili, Fatemeh
    Zarandi, Hamid R.
    PROCEEDINGS OF THE 2013 21ST EUROMICRO INTERNATIONAL CONFERENCE ON PARALLEL, DISTRIBUTED, AND NETWORK-BASED PROCESSING, 2013, : 478 - 485
  • [42] Improving the communication path reliability of WiMAX mesh network using multi sponsor technique
    Afzali, Mahboubeh
    AbuBakar, Kamalrulnizam
    Ghafoor, Keyhan Zrar
    Lloret, Jaime
    Karamoozian, Amir
    TELECOMMUNICATION SYSTEMS, 2015, 60 (01) : 133 - 141
  • [43] Stable, Low Power and Bit-Interleaving Aware SRAM Memory for Multi-Core Processing Elements
    Yadav, Nandakishor
    Kim, Youngbae
    Li, Shuai
    Choi, Kyuwon Ken
    ELECTRONICS, 2021, 10 (21)
  • [44] Design of small-area multi-bit antifuse-type 1 kbit OTP memory
    Li Long-zhen
    Lee, J. H.
    Kim, T. H.
    Jin, K. H.
    Park, M. H.
    Ha, P. B.
    Kim, Y. H.
    JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY, 2009, 16 (03): : 467 - 473
  • [45] Design of small-area multi-bit antifuse-type 1 kbit OTP memory
    Long-zhen Li
    J. H. Lee
    T. H. Kim
    K. H. Jin
    M. H. Park
    P. B. Ha
    Y. H. Kim
    Journal of Central South University of Technology, 2009, 16 : 467 - 473
  • [46] Design of small-area multi-bit antifuse-type 1 kbit OTP memory
    李龙镇
    LEE J H
    KIM T H
    JIN K H
    PARK M H
    HA P B
    KIM Y H
    Journal of Central South University of Technology, 2009, 16 (03) : 467 - 473
  • [47] Hardened Design Based on Advanced Orthogonal Latin Code against Two Adjacent Multiple Bit Upsets (MBUs) in Memories
    Xiao, Liyi
    Li, Jiaqiang
    Li, Jie
    Guo, Jing
    PROCEEDINGS OF THE SIXTEENTH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ISQED 2015), 2015, : 480 - 484
  • [48] Stepped Parity: A Low-cost Multiple Bit Upset Detection Technique
    Ebrahitni, Mojtaba
    Tahoori, Mehdi B.
    2015 IEEE INTERNATIONAL TEST CONFERENCE (ITC), 2015,
  • [49] Survey of Reliability Research on 3D Packaged Memory
    Zhou, Shuai
    Ma, Kaixue
    Wu, Yugong
    Liu, Peng
    Hu, Xianghong
    Nie, Guojian
    Ren, Yan
    Qiu, Baojun
    Cai, Nian
    Xu, Shaoqiu
    Wang, Han
    ELECTRONICS, 2023, 12 (12)
  • [50] A diversity and reliability-enhanced synthetic minority oversampling technique for multi-label learning
    Gong, Yanlu
    Wu, Quanwang
    Zhou, Mengchu
    Chen, Chao
    INFORMATION SCIENCES, 2025, 690