Numerical modeling of a dielectric modulated surrounding-triple-gate germanium-source MOSFET (DM-STGGS-MOSFET)-based biosensor

被引：0
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作者：
Amit Das
Sonam Rewari
Binod Kumar Kanaujia
S. S. Deswal
R. S. Gupta
机构：
[1] Jawaharlal Nehru University,School of Computational and Integrative Sciences
[2] Delhi Technological University,Department of Electronics and Communication Engineering
[3] Maharaja Agrasen Institute of Technology,Department of Electrical and Electronics Engineering
[4] Maharaja Agrasen Institute of Technology,Department of Electronics and Communication Engineering
来源：
Journal of Computational Electronics | 2023年 / 22卷
关键词：
Analytical model; Biosensing; Gate-all-around MOSFET; Surrounding-gate MOSFET; TCAD; Threshold voltage; Subthreshold swing;
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摘要：
This paper presents for the first time an analytical model of a dielectric modulated surrounding-triple-gate MOSFET with a germanium source-based biosensor, which shows excellent improvement in sensitivity when compared to a silicon source. The mathematical analysis is based on the center-channel potential which is obtained by solving Poisson's equation in the cylindrical coordinate system using a parabolic approximation. The channel potential profile, threshold voltage, drain current, and subthreshold swing are obtained mathematically. Biosensing performance is investigated for different charged and neutral biomolecules by varying different device metrics including cavity thickness, channel thickness, cavity length, channel doping, and drain voltage. The analytical results are validated and verified with numerical simulations conducted with the ATLAS TCAD simulator and show outstanding agreement with the simulated results.
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页码：742 / 759
页数：17
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