Dielectric, ferroelectric and conduction behavior of tungsten modified SrBi4Ti4O15 ceramic

被引:0
作者
P. Nayak
T. Badapanda
S. Panigrahi
机构
[1] National Institute of Technology,Department of Physics
[2] C.V. Raman College of Engineering,Department of Physics
来源
Journal of Materials Science: Materials in Electronics | 2016年 / 27卷
关键词
Oxygen Vacancy; Domain Wall; Dielectric Loss; Bi2O3; Piezoelectric Property;
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中图分类号
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摘要
The effect of Tungsten (W) modification of the structural, dielectric, ferroelectric and conduction behavior of SrBi4Ti4O15 ceramic with general formula SrBi4−2x/3Ti4−xWxO15 (x = 0.0, 0.02, 0.04, 0.06, 0.08, 0.1) was investigated. The ceramic samples were synthesized by the conventional solid-state reaction method. X-ray diffraction (XRD) and Raman scattering techniques have been employed to characterize the structural property which demonstrated that all the compositions were single phase four layered crystalline structure, involving slight reduction of lattice distortion with an increase in W doping level. The temperature dependent dielectric study revealed that the dielectric constant and the transition temperature decreases with increase in W content. The temperature dependent Ac conductivity was studied and the activation energy was calculated for all the compositions. The ferroelectric and piezoelectric properties enhanced with Tungsten content, which may be attributed to the decrease of oxygen vacancies. Among all the compositions, x = 0.1 showed improved ferroelectric and piezoelectric properties.
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页码:1217 / 1226
页数:9
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