FET on hydrogenated diamond surface

被引：0
作者：
Yu. V. Gulyaev
A. Yu. Mityagin
G. V. Chucheva
M. S. Afanas’ev
K. N. Zyablyuk
N. Kh. Talipov
P. G. Nedosekin
A. E. Nabiev
机构：
[1] Russian Academy of Sciences,Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
[2] Industrial Technological Center UralAlmazInvest,undefined
[3] Azerbaijan State Pedagogical University,undefined
来源：
Journal of Communications Technology and Electronics | 2014年 / 59卷
关键词：
Diamond Surface; Perfec Tion; Resistive Evaporation; Surface Capacitance; Diamond Relate Mater;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is demonstrated that a FET can be created on a hydrogenated diamond surface. A technology for production and properties of conducting hydrogenated diamond surface are considered. The technology is used to create a FET on the hydrogenated (110) surface of the 2A natural diamond.
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页码：282 / 287
页数：5
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