Selective dry etching of InGaP over GaAs in inductively coupled plasmas

被引：0

作者：

P. Leerungnawarat

H. Cho

D. C. Hays

J. W. Lee

M. W. Devre

B. H. Reelfs

D. Johnson

J. N. Sasserath

C. R. Abernathy

S. J. Pearton

机构：

[1] University of Florida,Department of Materials Science and Engineering

[2] Plasma Therm,undefined

来源：

Journal of Electronic Materials | 2000年 / 29卷

关键词：

InGaP/GaAs; dry etching; inductively coupled plasmas;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

By exploiting the relatively high volatility of In etch products in CH4/H2 discharges, we were able to obtain a maximum selectivity for InGaP over GaAs of ∼20 at low ion energies and fluxes. Three different inert gas additives to CH4/H2 were examined, with Ar producing higher selectivities than He or Xe. This process is attractive for selective removal of the InGaP emitter in the fabrication of heterojunction bipolar transistors.

引用

页码：586 / 590

页数：4

共 71 条

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