Electrophysical properties of GaAs layers and the characteristics of fast particle GaAs detectors

被引：0
作者：
V. A. Bespalov
A. V. Vorontsov
A. A. Gorbatsevich
V. I. Egorkin
G. P. Zhigal’skii
É. A. Il’ichev
A. V. Kulakov
B. G. Nalbandov
V. S. Pantuev
V. N. Rasputnyi
Yu. N. Sveshnikov
S. S. Shmelev
机构：
[1] Moscow State Institute of Electronic Technology (Technical University),
[2] Joint-Stock Venture Élma-Malakhit,undefined
[3] State Unitary Enterprise Lukin Research Institute of Physical Problems,undefined
来源：
Technical Physics | 2004年 / 49卷
关键词：
Radiation; GaAs; Radiation Detector; Epitaxial Film; GaAs Layer;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Results of complex experiments aimed at finding a relationship between the properties of initial GaAs single-crystal wafers and epitaxial films and the threshold spectrometric characteristics of ionizing radiation detectors are reported.
引用
收藏
页码：310 / 317
页数：7
相关论文
共 15 条
[1]  
Bethe H. A.(1930)undefined Ann. Phys. 5 325-undefined
[2]  
Newell D. M.(1981)undefined IEEE Trans. Nucl. Sci. 28 4403-undefined
[3]  
Ho P. T.(1983)undefined IEEE Trans. Nucl. Sci. 30 4277-undefined
[4]  
Mencik R. L.(1982)undefined IEEE Trans. Nucl. Sci. 29 656-undefined
[5]  
Pelos J. R.(1985)undefined IEEE Trans. Nucl. Sci. 32 1-undefined
[6]  
Derley H. H.(1983)undefined IEEE Trans. Nucl. Sci. 30 83-undefined
[7]  
Houston T. W.(1998)undefined Zh. Tekh. Fiz. 68 41-undefined
[8]  
Hite L. R.(undefined)undefined undefined undefined undefined-undefined
[9]  
Zully R.(undefined)undefined undefined undefined undefined-undefined
[10]  
Notthoff J. K.(undefined)undefined undefined undefined undefined-undefined
12