X-ray diffractometry diagnosis of laser diffusion of aluminum into silicon

被引:0
作者
V. A. Bushuev
A. P. Petrakov
机构
[1] Moscow State University,
来源
Technical Physics | 2000年 / 45卷
关键词
Radiation; Aluminum; Silicon; Pulse Duration; Crystal Lattice;
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学科分类号
摘要
High-resolution X-ray diffractometry was used to study alterations of the structure of single-crystal silicon taking place in the process of nonequilibrium solid-state diffusion of aluminum atoms occurring under heating of the near-surface layer by radiation of a CO2 laser with pulse durations 1, 2, and 3 s. Crystal lattice deformation profiles, diffusion lengths, and densities of dislocation loops have been determined.
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页码:613 / 617
页数:4
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