Numerical Investigation on Modified Bottom Heater of DS Furnace to Improve mc-Si Ingot

被引：0
作者：
Aravindan Gurusamy
M. Thiyagarajan
M. Srinivasan
P. Ramasamy
机构：
[1] SSN Research Centre,Division of Physics, School of Advanced Sciences
[2] SSN College of Engineering,Department of Physics
[3] Vellore Institute of Technology,undefined
[4] SSN College of Engineering,undefined
来源：
Silicon | 2023年 / 15卷
关键词：
Silicon; Computer simulation; Solar cell; Heat and Mass transfer; Directional solidification; Growth from the melt;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The growth of multi-crystalline silicon ingot for Photo-voltaic application has been done using an optimized directional solidification process. Two Directional solidification furnace designs are considered, first one is ingot grown by using the side-top heater and the second one is ingot grown by using the side-bottom heater. The convex melt-crystal interface is obtained in the whole casting process when using the side-bottom heaters. The temperature distribution was optimized by adjusting the side-bottom heaters which give better control of thermal stress generation during the casting process. The normal stresses, sigma 11, sigma 22 and sigma 33 are analyzed in the grown crystals by using both the side-top and the side-bottom heater systems. The stress values are reduced when the side-bottom heaters are used. The side-bottom heater system has given better results than the side-top heater system for growing mc-Si ingot.
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页码：3713 / 3724
页数：11
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