graphene pattern;
crystal growth;
snowflakes;
chemical vapor deposition;
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摘要:
The phenomenon of ordered pattern formation is universal in nature but involves complex non-equilibrium processes that are highly important for both fundamental research and applied materials systems. Among countless pattern systems, a snowflake is possibly the most fascinating example offered by nature. Here, we report that single-layered and single-crystalline graphene flakes (GFs) with highly regular and hexagonal symmetric patterns can be grown on a liquid copper surface using a CH4 chemical vapor deposition (CVD) method. The different morphologies of these GFs can be precisely tailored by varying the composition of the inert gas/H2 carrier gas mixture used to produce the GFs, and the GF edges can be continuously tuned over the full spectrum from negative to zero to positive curvature in a controllable way. The family of GF crystal patterns is remarkably analogous to that of snowflakes, representing an ideal two-dimensional (2D) growth system. Pattern formations from compact to dendritic GFs can be explained by the continuous modulation of the competition between adatom diffusion along island edges or corners and surface diffusion processes.
机构:
Queen Mary Univ London, Sch Phys & Astron, Mile End Rd, London E1 4NS, EnglandQueen Mary Univ London, Sch Phys & Astron, Mile End Rd, London E1 4NS, England
Peci, Taze
Baxendale, Mark
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Queen Mary Univ London, Sch Phys & Astron, Mile End Rd, London E1 4NS, EnglandQueen Mary Univ London, Sch Phys & Astron, Mile End Rd, London E1 4NS, England
Baxendale, Mark
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,
2017,
214
(11):
机构:
Entegris, Adv Deposit Mat Business Unit, Suwon 16229, South KoreaEntegris, Adv Deposit Mat Business Unit, Suwon 16229, South Korea
Sa, Y. K.
Bang, Junghwan
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Korea Inst Ind Technol, Micro Joining Ctr, 156 Gaetbeol Ro, Incheon 406840, South KoreaEntegris, Adv Deposit Mat Business Unit, Suwon 16229, South Korea
Bang, Junghwan
Son, Junhyuk
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Korea Inst Ind Technol, Micro Joining Ctr, 156 Gaetbeol Ro, Incheon 406840, South Korea
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaEntegris, Adv Deposit Mat Business Unit, Suwon 16229, South Korea
Son, Junhyuk
Yu, Dong-Yurl
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Korea Inst Ind Technol, Micro Joining Ctr, 156 Gaetbeol Ro, Incheon 406840, South Korea
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaEntegris, Adv Deposit Mat Business Unit, Suwon 16229, South Korea
Yu, Dong-Yurl
Kim, Yun-Chan
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Korea Inst Ind Technol, Micro Joining Ctr, 156 Gaetbeol Ro, Incheon 406840, South Korea
Seoul Natl Univ Sci & Technol, Dept Mat Sci & Engn, Seoul 01811, South KoreaEntegris, Adv Deposit Mat Business Unit, Suwon 16229, South Korea
机构:
S China Normal Univ, Sch Informat & Optoelect Sci & Engn, Guangzhou 510631, Peoples R ChinaS China Normal Univ, Sch Informat & Optoelect Sci & Engn, Guangzhou 510631, Peoples R China
Wang, H
Liao, CJ
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机构:S China Normal Univ, Sch Informat & Optoelect Sci & Engn, Guangzhou 510631, Peoples R China
Liao, CJ
Fan, GH
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机构:S China Normal Univ, Sch Informat & Optoelect Sci & Engn, Guangzhou 510631, Peoples R China
Fan, GH
Liu, SH
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机构:S China Normal Univ, Sch Informat & Optoelect Sci & Engn, Guangzhou 510631, Peoples R China
Liu, SH
Zeng, GC
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机构:S China Normal Univ, Sch Informat & Optoelect Sci & Engn, Guangzhou 510631, Peoples R China
Zeng, GC
Wu, YZ
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机构:S China Normal Univ, Sch Informat & Optoelect Sci & Engn, Guangzhou 510631, Peoples R China
Wu, YZ
Liao, WT
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机构:S China Normal Univ, Sch Informat & Optoelect Sci & Engn, Guangzhou 510631, Peoples R China
Liao, WT
Cai, JY
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机构:S China Normal Univ, Sch Informat & Optoelect Sci & Engn, Guangzhou 510631, Peoples R China
Cai, JY
Song, ZJ
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机构:S China Normal Univ, Sch Informat & Optoelect Sci & Engn, Guangzhou 510631, Peoples R China
Song, ZJ
Le, XY
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机构:S China Normal Univ, Sch Informat & Optoelect Sci & Engn, Guangzhou 510631, Peoples R China
机构:
Univ Tokyo, Sch Engn, Dept Chem & Biotechnol, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Sch Engn, Dept Chem & Biotechnol, Bunkyo Ku, Tokyo 1138656, Japan
Nishimura, Yosuke
Nishimura, Tatsuya
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机构:
Univ Tokyo, Sch Engn, Dept Chem & Biotechnol, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Sch Engn, Dept Chem & Biotechnol, Bunkyo Ku, Tokyo 1138656, Japan
Nishimura, Tatsuya
Kato, Takashi
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Univ Tokyo, Sch Engn, Dept Chem & Biotechnol, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Sch Engn, Dept Chem & Biotechnol, Bunkyo Ku, Tokyo 1138656, Japan
机构:
Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, JapanNatl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
Matsumura, Ryo
Fukata, Naoki
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机构:
Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
Univ Tsukuba, Grad Sch Pure & Appl Sci, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058573, JapanNatl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan