Metalorganic chemical vapor deposition of aluminum from tetramethylethylenediamine alane

被引:0
作者
Dae-Hwan Kim
Man-Young Park
Shi-Woo Rhee
机构
[1] Pohang University of Science and Technology (POSTECH),Laboratory for Advanced Materials Processing (LAMP), Department of Chemical Engineering
来源
Journal of Materials Science: Materials in Electronics | 1999年 / 10卷
关键词
Activation Energy; Surface Roughness; Electrical Resistivity; Chemical Vapor Deposition; Substrate Temperature;
D O I
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学科分类号
摘要
Tetramethylethylenediamine alane (TMEDAA) was synthesized by ligand displacement reaction of dimethylethylamine alane (DMEAA) with N,N,N’N’-tetramethylethylendiamine (TMEDA), and the chemical vapor deposition of aluminum film from TMEDAA in the temperature range of 140–260°C has been studied. The maximum deposition rate of Al film from TMEDAA was 140 nm/min at 210°C and the apparent activation energy over a substrate temperature range of 140–210°C is about 58.6 kJ/mol. Al films were deposited on TiN/Si substrate and electrical resistivity values in the range 5–35 μΩcm were obtained. The incorporation of carbon and oxygen, and surface roughness were increased as the substrate temperature was increased. The Al films with a preferred orientation of (1 1 1) were obtained over a wide range of substrate temperature.
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页码:285 / 290
页数:5
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