共 27 条
[1]
Advanced Plasma Processing Technology, (2008)
[2]
Wolf S., Tauber R.N., Process Technology, (2000)
[3]
Nojiri K., Dry Etching Technology for Semiconductors, (2015)
[4]
Lieberman M.A., Lichtenberg A.J., Principles of Plasma Discharges and Materials Processing, (2005)
[5]
Roosmalen J., Baggerman J.A.G., Brader S.J.H., Dry Etching for VLSI, (1991)
[6]
Jin W., Vitale S.A., Sawin H.H., Plasma-surface kinetics and simulation of feature profile evolution in Cl<sub>2</sub> + HBr etching of polysilicon, J. Vac. Sci. Technol., 20, pp. 2106-2114, (2002)
[7]
Vitale S.A., Chae H., Sawin H.H., Silicon etching yields in F<sub>2</sub>, Cl<sub>2</sub>, Br<sub>2</sub>, and HBr high density plasmas, J. Vac. Sci. Technol., 19, pp. 2197-2206, (2001)
[8]
Cheng C.C., Guinn K.V., Herman I.P., Donnelly V.M., Competitive halogenation of silicon surfaces in HBr/Cl<sub>2</sub> plasmas studied with X-ray photoelectron spectroscopy and in situ, realtime, pulsed laserinduced thermal desorption, J. Vac. Sci. Technol. A, 13, pp. 1970-1976, (1995)
[9]
Lim N., Efremov A., Kwon K.-H., Comparative study of Cl<sub>2</sub> + O<sub>2</sub> and HBr + O<sub>2</sub> plasma chemistries in respect to silicon reactive-ion etching process, Vacuum, 186, (2021)
[10]
Efremov A.M., Betelin V.B., Kwon K.-H., Kinetics and mechanisms of reactive-ion etching of Si and SiO<sub>2</sub> in a plasma of a mixture of HBr + O<sub>2</sub>, Russ. Microelectron., 49, pp. 403-408, (2020)