Structural and optical properties of thin films of Cu(In,Ga)Se2 semiconductor compounds

被引：0

作者：

A. V. Mudryi

V. F. Gremenok

A. V. Karotki

V. B. Zalesski

M. V. Yakushev

F. Luckert

R. Martin

机构：

[1] National Academy of Sciences of Belarus,Scientific and Applied Materials Research Center

[2] National Academy of Sciences of Belarus,B. I. Stepanov Institute of Physics

[3] Strathclyde University,undefined

来源：

Journal of Applied Spectroscopy | 2010年 / 77卷

关键词：

chalcopyrite semiconductors; chemical composition; absorption coefficient; x-ray diffraction analysis; structure;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The chemical composition of Cu(In,Ga)Se2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap Eg for this material in the 1.05–1.72 eV spectral range at 4.2 K.

引用

页码：371 / 377

页数：6

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