'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP (λ = 1.53–1.55 μm) laser diodes

被引：0

作者：

A. Paraskevopoulos

H.-J. Hensel

S. Schelhase

J. Frahm

J. Kübler

A. Denker

A. Gubenko

E.L. Portnoi

机构：

[1] Heinrich-Hertz-Institut für Nachrichtentechnik-Berlin,A.F. Ioffe Physico

[2] Advanced Photonic Systems GmbH,Techn. Institute

[3] Hahn Meitner Institut Berlin,undefined

[4] Russian Academy of Sciences,undefined

来源：

Optical and Quantum Electronics | 2001年 / 33卷

关键词：

on-wafer surface implantation; picosecond pulse lasers;

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摘要：

A cost-effective, on-wafer surface implantation technique was applied for the fabrication of short pulse InGaAsP/InP laser diodes. Based on thick electroplated Au masks, local ion implantation could be performed, allowing for a versatile design of the absorber region. Picosecond pulses with typical FWHM of 20 ps and optical power exceeding 1.5 W were obtained. The measured emission spectrum in the pulsed regime demonstrates the potential of such devices to pump commercially available EDFA's.

引用

页码：745 / 750

页数：5