Nonlinear optical properties of asymmetric n-type double δ-doped GaAs quantum well under intense laser field

被引：0

作者：

Huseyin Sari

Esin Kasapoglu

Unal Yesilgul

Serpil Sakiroglu

Fatih Ungan

Ismail Sökmen

机构：

[1] Faculty of Education,

[2] Department of Mathematical and Science Education,undefined

[3] Cumhuriyet University,undefined

[4] Faculty of Science,undefined

[5] Department of Physics,undefined

[6] Cumhuriyet University,undefined

[7] Faculty of Technology,undefined

[8] Department of Optical Engineering,undefined

[9] Cumhuriyet University,undefined

[10] Faculty of Science,undefined

[11] Department of Physics,undefined

[12] Dokuz Eylül University,undefined

来源：

The European Physical Journal B | 2017年 / 90卷

关键词：

Solid State and Materials;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effect of non-resonant intense laser field on the intersubband-related optical absorption coefficient and refractive index change in the asymmetric n-type double δ-doped GaAs quantum well is theoretically investigated. The confined energy levels and corresponding wave functions of this structure are calculated by solving the Schrödinger equation in the laser-dressed confinement potential within the framework of effective mass approximation. The optical responses are reported as a function of the δ-doped impurities density and the applied non-resonant intense laser field. Additionally, the calculated results also reveal that the non-resonant intense laser field can be used as a way to control the electronic and optical properties of the low dimensional semiconductor nano-structures.

引用

共 50 条

[1] Nonlinear optical properties of asymmetric n-type double δ-doped GaAs quantum well under intense laser field
Sari, Huseyin
Kasapoglu, Esin
Yesilgul, Unal
Sakiroglu, Serpil
Ungan, Fatih
Sokmen, Ismail
EUROPEAN PHYSICAL JOURNAL B, 2017, 90 (09):
[2] Nonlinear optical properties of asymmetric n-type double δ-doped GaAs quantum well under intense laser field? (vol 90, 162, 2017)
Sari, Huseyin
Kasapoglu, Esin
Yesilgul, Unal
Sakiroglu, Serpil
Ungan, Fatih
Sokmen, Ismail
EUROPEAN PHYSICAL JOURNAL B, 2018, 91 (04):
[3] Combined effects of the intense laser field, electric and magnetic fields on the optical properties of n-type double δ-doped GaAs quantum well
Sari, H.
Kasapoglu, E.
Sakiroglu, S.
Yesilgul, U.
Ungan, F.
Sokmen, I.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2017, 90 : 214 - 217
[4] Computation of the nonlinear optical properties of n-type asymmetric triple δ-doped GaAs quantum well
Ungan, F.
Pal, S.
Bahar, M. K.
Mora-Ramos, M. E.
SUPERLATTICES AND MICROSTRUCTURES, 2019, 130 : 76 - 86
[5] The effect of the intense laser field on the electronic states and optical properties of n-type double δ-doped GaAs quantum wells
Kasapoglu, E.
Yesilgul, U.
Ungan, F.
Sokmen, I.
Sari, H.
OPTICAL MATERIALS, 2017, 64 : 82 - 87
[6] Role of external fields on the nonlinear optical properties of a n-type asymmetric δ-doped double quantum well
Salman Durmuslar, Aysevil
Mora-Ramos, Miguel Eduardo
Ungan, Fatih
OPTICAL AND QUANTUM ELECTRONICS, 2020, 52 (11)
[7] The effects of intense laser field on optical responses of n-type delta doped GaAs quantum well under applied electric and magnetic fields
Sari, H.
Ungan, F.
Sakiroglu, S.
Yesilgul, U.
Sokmen, I
OPTIK, 2018, 162 : 76 - 80
[8] Effects of electromagnetic fields on the nonlinear optical properties of CrossMaric asymmetric double quantum well under intense laser field
Yesilgul, U.
Sari, H.
Ungan, F.
Martinez-Orozco, J. C.
Restrepo, R. L.
Mora-Ramos, M. E.
Duque, C. A.
Sokmen, I.
CHEMICAL PHYSICS, 2017, 485 : 81 - 87
[9] Optical properties of n-type asymmetric triple δ-doped quantum well under external fields
Ungan, F.
Bahar, M. K.
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PHYSICA SCRIPTA, 2020, 95 (05)
[10] Intense laser effects on the optical properties of asymmetric GaAs double quantum dots under applied electric field
Doina Bejan
Ecaterina Cornelia Niculescu
The European Physical Journal B, 2016, 89

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