Submonolayer films on a Si(111) surface under low-energy ion bombardment

被引：0

作者：

Nimatov S.J. ^{[1
]}

Rumi D.S. ^{[2
]}

机构：

[1] Tashkent State Technical University

[2] NTP PROTON

来源：

Bulletin of the Russian Academy of Sciences: Physics | 2014年 / 78卷 / 06期

关键词：

Film growth - Silicides - Alkali metals - Ion bombardment;

D O I：

10.3103/S1062873814060215

中图分类号：

学科分类号：

摘要：

The kinetics of deposition for monomolecular submonolayer films on a Si(111) surface is studied via low-energy electron diffraction with measurements of the intensities of diffraction reflection and the elastic background. The degree of structural perfection in growing films is estimated for alkali-metal silicides and silicon from low-energy beams. The optimum energy and dose intervals of silicide film formation are determined. © 2014 Allerton Press, Inc.

引用

页码：531 / 534

页数：3

共 4 条

[1]

Garafutdinova I.A., Atabaev B.G., Rumi D.S., Et al., Proc. 23rd Int. Conf. on Photonic Electronic and Atomic Collisions, (2003)

[2]

Rumi D.S., Atabaev B.G., Garafutdinova I.A., Et al., Poverkhn. Rentgen., Sinkhrotron. Neitron. Issl., (2004)

[3]

Rumi D.S., Nimatov S.J., Garafutdinova I.A., Poverkhn. Rentgen., Sinkhrotron. Neitron. Issl., (2006)

[4]

Garafutdinova I.A., Dzhamaletdinov I., Rumi D.S., Et al., Metod DME v Izuchenii Protsessov Na real'Noi Poverkhnosti Monokristallov, (1986)

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