Frequency-dependent electrical conductivity of nanocrystalline SnO2

被引:0
作者
A. S. Chizhov
M. N. Rumyantseva
A. M. Gaskov
机构
[1] Moscow State University,
来源
Inorganic Materials | 2013年 / 49卷
关键词
Constant Phase Element; Nanocrystalline Material; Barrier Model; Charge Transport Process; Dimensionless Conductivity;
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摘要
Nanocrystalline SnO2 with a crystallite size of 3–4 and 5–6 nm has been prepared by a sol-gel process in aqueous solution. Its ac electrical conductivity has been measured in dry air at a temperature of 200°C. The observed frequency dependence of its conductivity has been interpreted in terms of the random potential barrier model. The data obtained indicate that the transport properties of the material are dominated by hopping conduction through disordered crystallite boundaries.
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页码:1000 / 1004
页数:4
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共 35 条
  • [1] Serin N(2011)Estimation of compensation ratio by identifying the presence of different hopping conduction mechanisms in SnO Thin Solid Films 519 2302-2307
  • [2] Yildiz A(2004) thin films Solid State Commun. 130 313-316
  • [3] Alsac AA(2010)Low-temperature transport properties of individual SnO J. Alloys Compd. 505 743-749
  • [4] Serin T(2012) nanowires Ceram. Int. 38 1281-1286
  • [5] Yong-Jun M(2003)Electrical and dielectric properties of coprecipitated nanocrystalline tin oxide J. Phys. Chem. Solids 64 659-663
  • [6] Feng Z(2002)AC transport properties of nanocrystalline SnO Phys. Chem. Chem. Phys. 4 3173-3178
  • [7] Li L(1985) semiconductor Phys. Rev. B: Condens. Matter Mater. Phys. 55 529-532
  • [8] Zhang Z(1996)Grain size effect on the universality of ac conductivity in SnO Ferroelectrics 176 335-R15 119
  • [9] Babar AR(1998)Computer simulations of the random barrier model Phys. Rev. B: Condens. Matter Mater. Phys. 57 R15 116-970
  • [10] Shinde SS(2012)Fractal model for the ac response of a rough interface Tech. Phys. 57 965-107