InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band

被引：0
作者：
Hai-Zhi Song
Mukhtar Hadi
Yanzhen Zheng
Bizhou Shen
Lei Zhang
Zhilei Ren
Ruoyao Gao
Zhiming M. Wang
机构：
[1] University of Electronic Science and Technology of China,Institute of Fundamental and Frontier Sciences
[2] University of Electronic Science and Technology of China,School of Optoelectronic Information
[3] Southwest Institute of Technical Physics,Department of Fundamental Laser
来源：
Nanoscale Research Letters | 2017年 / 12卷
关键词：
Nanocavity; Single-photon source; Quantum dot; Distributed Bragg reflector; 78.67.-n; 78.67.Hc; 78.67.Pt;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors, such a pillar cavity with nanometer-scaled diameters can give a quality factor of 104–105 at 1.55 μm. Capable of weakly and strongly coupling a single quantum dot with an optical mode, this nanocavity could be a prospective candidate for quantum-dot single-photon sources at 1.55-μm telecommunication band.
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