Influence of a predeposited Si1−xGex layer on the growth of self-assembled SiGe/Si(001) islands

被引：0
|
作者：
N. V. Vostokov
Yu. N. Drozdov
Z. F. Krasil’nik
D. N. Lobanov
A. V. Novikov
A. N. Yablonskii
M. Stoffel
U. Denker
O. G. Schmidt
O. M. Gorbenko
I. P. Soshnikov
机构：
[1] Russian Academy of Sciences,Institute of the Physics of Microstructures
[2] Max-Planck-Institut für Festkörperforschung,Ioffe Physicotechnical Institute
[3] Russian Academy of Sciences,Institute of Analytical Instrument Making
[4] Russian Academy of Sciences,undefined
来源：
Physics of the Solid State | 2005年 / 47卷
关键词：
Spectroscopy; State Physics; Surface Roughness; Surface Density; Elastic Energy;
D O I：
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中图分类号：
学科分类号：
摘要：
The growth of self-assembled Ge(Si) islands on a strained Si1−xGex layer (0% < x < 20%) is studied. The size and the surface density of islands are found to increase with Ge content in the Si1−xGex layer. The increased surface density is related to augmentation of the surface roughness after deposition of the SiGe layer. The enlargement of islands is accounted for by the decrease of the wetting layer in thickness due to the additional elastic energy accumulated in the SiGe layer and to enhanced Si diffusion from the Si1−xGex layer into the islands. The increase in the fraction of the surface occupied by islands leads to a greater order in the island arrangement.
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页码：26 / 29
页数：3
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