Low-temperature photoluminescence and X-ray diffractometry study of InxGa1−xAs quantum wells

被引：0
|
作者：
S. V. Evstigneev
R. M. Imamov
A. A. Lomov
Yu. G. Sadof’ev
Yu. V. Khabarov
M. A. Chuev
D. S. Shipitsin
机构：
[1] Russian Academy of Sciences,Lebedev Institute of Physics
[2] Russian Academy of Sciences,Shubnikov Institute of Crystallography
[3] Russian Academy of Sciences,Institute of Radio Engineering and Electronics
[4] Russian Academy of Sciences,Institute of Physics and Technology
来源：
Semiconductors | 2000年 / 34卷
关键词：
Experimental Data; Recombination; GaAs; Magnetic Material; Electromagnetism;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The structures grown by molecular-beam epitaxy with InxGa1−xAs quantum wells (QWs) in GaAs were studied by X-ray diffractometry and low-temperature photoluminescence techniques. The inhomogeneity of the QW composition along the growth direction was established. Energy positions of the exciton recombination lines in the QWs with step-graded In distribution were calculated, and good agreement with the experimental data was obtained.
引用
收藏
页码：693 / 699
页数：6
相关论文
共 18 条
  • [1] Structure of the interfaces of the InxGa1 − xAs quantum well from X-ray diffraction data
    A. M. Afanas’ev
    M. A. Chuev
    R. M. Imamov
    A. A. Lomov
    Crystallography Reports, 2001, 46 : 707 - 716
  • [2] Study of optical characteristics of structures with strongly strained InxGa1 − xAs quantum wells
    D. A. Vinokurov
    V. A. Kapitonov
    D. N. Nikolaev
    Z. N. Sokolova
    A. L. Stankevich
    V. V. Shamakhov
    I. S. Tarasov
    Semiconductors, 2009, 43 : 1334 - 1337
  • [3] Impact of strain on the band offsets of important III-V quantum wells: InxGa1 - xN/GaN, GaAs/InxGa1 - xP and InxGa1 - xAs/AlGaAs
    Biswas, Dipankar
    Bera, Partha Pratim
    Das, Tapas
    Panda, Siddhartha
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2014, 19 : 11 - 16
  • [4] The effect of the Mn delta layer on the photosensitivity spectra of structures with InxGa1 − xAs/GaAs quantum wells
    A. P. Gorshkov
    I. A. Karpovich
    D. O. Filatov
    E. D. Pavlova
    M. V. Dorokhin
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2011, 5 : 563 - 565
  • [5] Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells with embedded InAs quantum dots
    L. G. Vega-Macotela
    T. V. Torchynska
    G. Polupan
    Journal of Materials Science: Materials in Electronics, 2017, 28 : 7126 - 7131
  • [6] Low-temperature time-resolved photoluminescence in InGaN/GaN quantum wells
    A. V. Andrianov
    V. Yu. Nekrasov
    N. M. Shmidt
    E. E. Zavarin
    A. S. Usikov
    N. N. Zinov’ev
    M. N. Tkachuk
    Semiconductors, 2002, 36 : 641 - 646
  • [7] Structural characterization of interfaces in the AlxGa1−xAs/GaAs/AlxGa1−xAs heterostructures by high-resolution X-ray reflectometry and diffractometry
    A. A. Lomov
    A. G. Sutyrin
    D. Yu. Prokhorov
    G. B. Galiev
    Yu. V. Khabarov
    M. A. Chuev
    R. M. Imamov
    Crystallography Reports, 2005, 50 : 739 - 750
  • [8] Characterization of a Quantum Well in an Si/Si1-xGex/Si Heterostructure by X-ray Diffractometry
    Afanas'ev A.M.
    Boltaev A.P.
    Imamov R.M.
    Mukhamedzhanov E.Kh.
    Rzaev M.M.
    Chuev M.A.
    Russian Microelectronics, 2001, 31 (1) : 1 - 6
  • [9] PHOTOLUMINESCENCE AND X-RAY PHOTOELECTRON STUDY OF ALGAAS/GAAS NEAR-SURFACE QUANTUM-WELLS PASSIVATED BY A NOVEL INTERFACE CONTROL TECHNIQUE
    KODAMA, S
    HASHIZUME, T
    HASEGAWA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (8B): : 4540 - 4543
  • [10] Low-temperature MOVPE using TEGa for suppressed layer undulation in InxGa1-xAs/GaAs1-yPy superlattice on vicinal substrates
    Fujii, Hiromasa
    Sodabanlu, Hassanet
    Sugiyama, Masakazu
    Nakano, Yoshiaki
    JOURNAL OF CRYSTAL GROWTH, 2015, 414 : 3 - 9
12