Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of Atoms

被引：0
作者：
N. T. Bagraev
S. A. Kukushkin
A. V. Osipov
V. L. Ugolkov
机构：
[1] Institute of Problems of Mechanical Engineering,
[2] Russian Academy of Sciences,undefined
[3] Ioffe Institute,undefined
[4] Institute of Silicate Chemistry,undefined
[5] Russian Academy of Sciences,undefined
来源：
Semiconductors | 2022年 / 56卷
关键词：
silicon carbide on silicon; atom-substitution method; carbon-vacancy structures; terahertz radiation; nanostructure; quantum Faraday effect; superconductivity; Meissner–Ochsenfeld effect; Josephson effect; heat capacity;
D O I：
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页码：321 / 324
页数：3
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