Epitaxial growth of GaAs thin layers on NiSb substrates

被引：0

作者：

S. A. Aitkhozhin

A. S. Artemov

P. S. Belousov

M. A. Bobylev

E. V. Kaevitser

V. E. Lyubchenko

K. P. Petrov

Yu. Sh. Temirov

S. B. Farafonov

机构：

[1] Russian Academy of Sciences,Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)

来源：

Inorganic Materials | 2015年 / 51卷

关键词：

GaAs; Material Removal Rate; Electron Diffraction Pattern; NiSb; GaAs Film;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We report the growth of gallium arsenide epilayers on the surface of single-crystal NiSb having metallic conduction. The gallium arsenide epilayers were grown by molecular beam epitaxy under conditions typical of the fabrication of homoepitaxial structures. Structural and morphological characterization of the GaAs films showed that the growth process involved a transition from a textured polycrystal to a more ordered layer with a well-defined system of diffraction spots in its electron diffraction pattern, indicative of an epitaxial process.

引用

页码：83 / 87

页数：4