Preparation and Specific Capacitance Properties of Sulfur, Nitrogen Co-Doped Graphene Quantum Dots

被引:0
作者
Zhong Ouyang
Yun Lei
Yunpeng Chen
Zheng Zhang
Zicong Jiang
Jiaxin Hu
Yuanyuan Lin
机构
[1] Wuhan University of Technology,School of Resources and Environmental Engineering
来源
Nanoscale Research Letters | 2019年 / 14卷
关键词
Graphene quantum dots; Top-down; Doping ratios; The specific capacitance;
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学科分类号
摘要
Sulfur, nitrogen co-doped graphene quantum dots (S, N-GQDs) with high crystallinity were obtained by a top-down strategy. The as-prepared S, N-GQDs were investigated and the results indicate that S, N-GQDs exhibit a transverse dimension about 20 nm and a topographic height of 1–2 layers graphene. The incorporation of S, N can effectively reduce the layers of GQDs and strip the graphene sheets. Moreover, the S, N-GQDs reveal an absorption band located at 405 nm and exhibit an adjustable fluorescence characteristic in the excitation-visible range. Meanwhile, the S, N-GQDs shows a high specific capacitance of 362.60 F g−1 at a fixed scan rate of 5 mV s −1. This high performance is ascribed to the additional high pseudocapacitance provided by the doped S, N and the doping state acting as a trap state to enhance the charge storage capacity. The high specific capacitance advantages of S, N-GQDs illustrate their potential prospects in the capacitors.
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