Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

被引:0
作者
V. V. Korenev
A. V. Savelyev
A. E. Zhukov
A. V. Omelchenko
M. V. Maximov
机构
[1] Saint Petersburg Academic University—Nanotechnology Research and Education Center,Ioffe Physical
[2] Saint Petersburg State Polytechnical University,Technical Institute
[3] Russian Academy of Sciences,undefined
来源
Semiconductors | 2013年 / 47卷
关键词
Excited State; Capture Rate; State Lasing; Carrier Dynamic; Electron Capture Rate;
D O I
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中图分类号
学科分类号
摘要
It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.
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页码:1397 / 1404
页数:7
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