High-Field domain formation in thyristor structures at ultrahigh current densities

被引：0

作者：

A. V. Gorbatyuk

I. E. Panaiotti

机构：

[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute

来源：

Technical Physics Letters | 2003年 / 29卷

关键词：

Related Effect; Nonlinear Effect; Domain Formation; Double Injection; Residual Voltage;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have studied the mechanism of high-field domain formation in thyristor structures at ultrahigh current densities (J≫100 A/cm2) and the related effect of anomalous buildup of the direct residual voltage. The analysis is based on the results of numerical simulation of the process of double injection with allowance for accompanying nonlinear effects.

引用

页码：370 / 372

页数：2

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