Morphology, Structure, and Gas-Sensitive Properties of Manganese-Containing Silicon-Carbon Films

Manganese-containing silicon-carbon films are formed by electrochemical deposition from solutions based on hexamethyldisilazane and methanol on dielectric substrates with contact metallization of copper. The manufactured structures show a gas-sensitive response to carbon monoxide, sulfur dioxide, and methane molecules. It is established that the manufactured structures have a selective gas sensitivity to 1 ppm of carbon monoxide at an operating temperature of 150 degrees C. The kinetics of gas adsorption is described using the Elovich model. It is shown that at the initial moment the adsorption of methane and sulfur dioxide is represented by monomolecular adsorption. Scanning electron microscopy shows that the structure of the samples is multiphase and is characterized by the presence of the hexagonal 6H and rhombohedral 15R phases of silicon-carbide polytypes. The presence of the Si-C bond responsible for the presence of the amorphous phase of silicon carbide is also found. It is shown that under the influence of gases, a change in the structure of the samples occurs, which, in particular, manifests itself in a change in the position of the D and G peaks, the appearance of a phase of disordered graphite, as well as in the aggregation of crystallites with a change in size from 200 to 300 nm.