Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching

被引：0
作者：
Sabar D. Hutagalung
Mohammed M. Fadhali
Raed A. Areshi
Fui D. Tan
机构：
[1] Jazan University,Physics Department, Faculty of Science
[2] Ibb University,Physics Department, Faculty of Science
[3] Universiti Sains Malaysia,School of Materials and Mineral Resources Engineering
来源：
Nanoscale Research Letters | 2017年 / 12卷
关键词：
Silicon nanowires; Electroless etching; Microstructures; Reflectance; Band gap energy; Resistivity;
D O I：
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摘要：
Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO3. Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum reflectance of the SiNWs is approximately 19.2%, which is much lower than that of the Si substrate (65.1%). The minimum reflectance of the SiNWs is approximately 3.5% in the near UV region and 9.8% in the visible to near IR regions. The calculated band gap energy of the SiNWs is found to be slightly higher than that of the Si substrate. The I–V characteristics of a freestanding SiNW show a linear ohmic behavior for a forward bias up to 2.0 V. The average resistivity of a SiNW is approximately 33.94 Ω cm.
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