Unconventional Transport through Graphene on SrTiO3: A Plausible Effect of SrTiO3 Phase-Transitions

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作者：
Surajit Saha
Orhan Kahya
Manu Jaiswal
Amar Srivastava
Anil Annadi
Jayakumar Balakrishnan
Alexandre Pachoud
Chee-Tat Toh
Byung-Hee Hong
Jong-Hyun Ahn
T. Venkatesan
Barbaros Özyilmaz
机构：
[1] National University of Singapore,Department of Physics
[2] NUSNNI-NanoCore,Department of Chemistry
[3] National University of Singapore,Department of Chemistry
[4] Graphene Research Center,School of Electrical and Electronic Engineering
[5] National University of Singapore,Department of Electrical and Computer Engineering
[6] National University of Singapore,Department of Physics
[7] NUS Graduate School for Integrative Sciences and Engineering (NGS),Department of Physics
[8] Seoul National University,undefined
[9] Yonsei University,undefined
[10] National University of Singapore,undefined
[11] Indian Institute of Technology- Madras,undefined
[12] Indian Institute of Technology - Patna,undefined
来源：
Scientific Reports | / 4卷
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摘要：
High-k dielectric oxides are supposedly ideal gate-materials for ultra-high doping in graphene and other 2D-crystals. Here, we report a temperature-dependent electronic transport study on chemical vapor deposited-graphene gated with SrTiO3 (STO) thin film substrate. At carrier densities away from charge neutrality point the temperature-dependent resistivity of our graphene samples on both STO and SiO2/Si substrates show metallic behavior with contributions from Coulomb scattering and flexural phonons attributable to the presence of characteristic quasi-periodic nano-ripple arrays. Significantly, for graphene samples on STO substrates we observe an anomalous ‘slope-break’ in the temperature-dependent resistivity for T = 50 to 100 K accompanied by a decrease in mobility above 30 K. Furthermore, we observe an unusual decrease in the gate-induced doping-rate at low temperatures, despite an increase in dielectric constant of the substrate. We believe that a complex mechanism is at play as a consequence of the structural phase transition of the underlying substrate showing an anomalous transport behavior in graphene on STO. The anomalies are discussed in the context of Coulomb as well as phonon scattering.
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  • [1] Geim AK(2009)Graphene: Status and Prospects Science 324 1530-1534
  • [2] Castro Neto AH(2009)The electronic properties of graphene Rev. Mod. Phys. 81 109-162
  • [3] Guinea F(2010)Graphene photonics and optoelectronics Nat. Photonic 4 611-622
  • [4] Peres NMR(2009)Gate-controlled nonvolatile graphene-ferroelectric memory Appl. Phys. Lett. 94 163505-578
  • [5] Novoselov KS(2011)Boron nitride substrates for high mobility chemical vapor deposited graphene Appl. Phys. Lett. 98 242105-134
  • [6] Geim AK(2011)Transport through Graphene on SrTiO Phys. Rev. Lett. 107 225501-3942
  • [7] Bonaccorso F(2010)Roll-to-roll production of 30-inch graphene films for transparent electrodes Nat. Nanotechnol. 5 574-3607
  • [8] Sun Z(2010)Graphene Field-Effect Transistors with Ferroelectric Gating Phys. Rev. Lett. 105 166602-209
  • [9] Hasan T(2011)Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics Europhys. Lett. 93 17002-1992
  • [10] Ferrari AC(2009)Strain Engineering of Graphene's Electronic Structure Phys. Rev. Lett. 103 046801-350
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