Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots

被引：0
作者：
Peng Wang
Wenwu Pan
Xiaoyan Wu
Juanjuan Liu
Chunfang Cao
Shumin Wang
Qian Gong
机构：
[1] State Key Laboratory of Functional Materials for Informatics,School of Physics
[2] Shanghai Institute of Microsystem and Information Technology,Department of Microtechnology and Nanoscience
[3] Chinese Academy of Sciences,undefined
[4] University of Chinese Academy of Sciences,undefined
[5] Chalmers University of Technology,undefined
来源：
Nanoscale Research Letters | 2016年 / 11卷
关键词：
InAs; Quantum dot; GaAsBi; MBE; Thermal stability;
D O I：
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中图分类号：
学科分类号：
摘要：
InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum dot (QD). In addition, a remarkable PL intensity enhancement is also obtained compared with low-temperature-grown GaAs-capped InAs QD sample. The GaAsBi matrix also preserves the shape of InAs QDs and leads to increase the activation energy for nonradiative recombination process at low temperature. Lower density and larger size of InAs QDs are obtained on the GaAsBi surface compared with the QDs grown on GaAs surface.
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