Low-Temperature Reactions between Vaporizing Silicon and Carbon

被引：0
|
作者：
A. I. Kharlamov
N. V. Kirillova
L. A. Karachevtseva
A. A. Kharlamova
机构：
[1] National Academy of Sciences of Ukraine,I. N. Frantsevich Institute of Problems in Materials Science
[2] Taras Shevchenko Kyiv National University,V. E. Lashkarev Institute of Semiconductor Physics
[3] National Academy of Sciences of Ukraine,undefined
来源：
Theoretical and Experimental Chemistry | 2003年 / 39卷 / 6期
关键词：
solid-phase reagents; vapor phase reaction; porous silicon; mechanism; nanothreads; silicon carbide;
D O I：
10.1023/B:THEC.0000013991.17426.52
中图分类号：
学科分类号：
摘要：
A new model is proposed for reactions between solids assuming formation of product in the gas phase (pores) due to the reaction of vaporizing reagents. Experimental results are given for the first time, which convincingly show that the reaction between solid-phase silicon and carbon below 1050 °C to give thread-like silicon carbide occurs due to rapidly vaporizing silicon and carbon atoms.
引用
收藏
页码：374 / 379
页数：5
相关论文
共 50 条
  • [21] Low-temperature Condensation of Carbon
    Krasnokutski, S. A.
    Goulart, M.
    Gordon, E. B.
    Ritsch, A.
    Jaeger, C.
    Rastogi, M.
    Salvenmoser, W.
    Henning, Th.
    Scheier, P.
    ASTROPHYSICAL JOURNAL, 2017, 847 (02):
  • [22] LOW-TEMPERATURE OXIDATION OF CARBON
    LEWIS, WK
    GILLILAND, ER
    PAXTON, RR
    INDUSTRIAL AND ENGINEERING CHEMISTRY, 1954, 46 (06): : 1327 - 1331
  • [23] LOW-TEMPERATURE CVD TIN AS A DIFFUSION BARRIER BETWEEN GOLD AND SILICON
    MUSHER, JN
    GORDON, RG
    JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (12) : 1105 - 1107
  • [24] Structure and properties of interfaces between silicon and its low-temperature oxide
    Bashkin, M.O.
    Emel'yanov, A.V.
    Men'shikov, O.D.
    Portnov, S.M.
    Physics, chemistry and mechanics of surfaces, 1995, 11 (09): : 938 - 943
  • [25] LOW-TEMPERATURE INTERNAL FRICTION IN SILICON
    STARODUB.SV
    KAIPNAZA.D
    KHIZNICH.LP
    KROMER, PF
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (06): : 1521 - +
  • [26] LOW-TEMPERATURE CLEAVAGE LUMINESCENCE OF SILICON
    KAALUND, CJ
    HANEMAN, D
    MCALPINE, NS
    SURFACE SCIENCE, 1995, 337 (1-2) : L795 - L799
  • [27] SILICON SELECTIVE EPITAXY AT LOW-TEMPERATURE
    KAWAMURA, M
    IKEDA, T
    OGIRIMA, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C391 - C391
  • [28] Low-temperature production of crystalline silicon
    Canter, Neil
    TRIBOLOGY & LUBRICATION TECHNOLOGY, 2013, 69 (04) : 14 - 15
  • [29] ON LOW-TEMPERATURE INTERNAL FRICTION IN SILICON
    KROMER, PF
    KHIZNICH.LP
    PHYSICA STATUS SOLIDI, 1967, 21 (02): : 811 - &
  • [30] Low-temperature thermal expansion of silicon
    Sugino, Ken-ichi
    Okazaki, Atsushi
    1600, (29):
12345