Study of optical characteristics of structures with strongly strained InxGa1 − xAs quantum wells

被引：0
作者：
D. A. Vinokurov
V. A. Kapitonov
D. N. Nikolaev
Z. N. Sokolova
A. L. Stankevich
V. V. Shamakhov
I. S. Tarasov
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2009年 / 43卷
关键词：
GaAs; Quantum Well; GaAs Substrate; Critical Thickness; Quantum Well Layer;
D O I：
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中图分类号：
学科分类号：
摘要：
Results of photoluminescence (PL) studies of heterostructures with strongly strained InxGa1 − xAs quantum wells (QWs) are presented. It is shown that the dependence of the PL intensity on the QW thickness has a maximum whose position depends on the composition of the InxGa1 − xAs solid solution. The PL wavelength at the maximum intensity is 1.13 µm at a QW thickness of 60 µm at a QW thickness of 50 Å for x = 0.39 and 0.42, respectively.
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页码：1334 / 1337
页数：3
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