Effect of rapid thermal annealing on the properties of thin dielectric films of gadolinium, titanium, and erbium oxides on the silicon carbide surface

被引：0
作者：
Yu. Yu. Bacherikov
N. L. Dmitruk
R. V. Konakova
O. S. Kondratenko
O. S. Lytvyn
V. V. Milenin
O. B. Okhrimenko
L. M. Kapitanchuk
A. M. Svetlichnyi
V. V. Polyakov
A. A. Shelcunov
机构：
[1] National Academy of Sciences of Ukraine,Lashkarev Institute of Semiconductor Physics
[2] National Academy of Sciences of Ukraine,Paton Institute of Electric Welding
[3] Taganrog State Radio Engineering University,undefined
来源：
Technical Physics | 2007年 / 52卷
关键词：
85.40.Sz; 81.07.-b;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of rapid thermal annealing on the properties of Ti, Ga, and Er oxide films on silicon carbide are studied by the methods of atomic force microscopy, monochromatic ellipsometry, optical absorption, and photoluminescence. The atomic composition of these films is analyzed as a function of the annealing time. The phase composition of the Ti, Ga, and Er oxide films on silicon carbide is shown to depend on the annealing time.
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页码：253 / 257
页数：4
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