Tuning Stress in Cu Thin Films by Developing Highly (111)-Oriented Nanotwinned Structure

被引:0
|
作者
I-Ju Wang
Ching-Shun Ku
Tu-Ngoc Lam
E-Wen Huang
K. N. Tu
Chih Chen
机构
[1] National Chiao Tung University,Department of Materials Science and Engineering
[2] National Synchrotron Radiation Research Center,Department of Materials Science and Engineering
[3] University of California at Los Angeles,undefined
来源
Journal of Electronic Materials | 2020年 / 49卷
关键词
Residual stress; nanotwinned Cu; electroplating; synchrotron x-ray diffraction;
D O I
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中图分类号
学科分类号
摘要
We have examined the effect of different bath temperatures on residual stress of both the random-oriented Cu films and the highly (111)-oriented nanotwinned Cu films by synchrotron radiation x-ray measurements. The bath temperature varied from 15°C to 40°C. The results indicate that the average residual stress in the highly (111)-oriented nanotwinned films is higher than that in the randomly oriented Cu films. However, the stress in the highly (111)-oriented Cu decreases with increasing bath temperature. The average residual stress can be reduced from 253 MPa electroplated at 15°C to 95 MPa under a bath temperature of 35°C. We could successfully tune and measure residual stress of the Cu thin films. The films with low residual stress prevent warpage from occurring on the substrate and lower the processing failure in copper direct bonding and other processes that need alignment.
引用
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页码:109 / 115
页数:6
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