Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

被引：0

作者：

N. F. Zikrillaev

S. V. Koveshnikov

Kh. S. Turekeev

N. Norkulov

S. A. Tachilin

机构：

[1] Tashkent State Technical University,

[2] National University of Uzbekistan,undefined

来源：

Physics of the Solid State | 2022年 / 64卷

关键词：

diffusion; gallium phosphide; silicon; solubility; concentration; binary complexes;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：587 / 594

页数：7

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