Decreasing dynamic turn-off losses in high-power distributed microgate bipolar switches

被引：0
|
作者：
A. V. Gorbatyuk
I. V. Grekhov
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Technical Physics Letters | 2008年 / 34卷
关键词：
72.20.-i; 72.20.Ht; 85.30.-z; 85.30.Rs; 07.50.Ek;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The operation of modern high-power bipolar switches has been analyzed to estimate the influence of the magnitude and distribution of an excess charge, which has to be extracted upon turn-off, on the integral dynamic losses. It is shown that these losses can be significantly reduced by properly matching the structural parameters and selecting the gate regime.
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页码：435 / 438
页数：3
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