Initial stages of gallium arsenide metalorganic vapor phase epitaxy

被引：0

作者：

P. B. Boldyrevskii

D. O. Filatov

I. A. Kazantseva

D. S. Smotrin

M. V. Revin

机构：

[1] Lobachevsky State University,

来源：

Inorganic Materials | 2016年 / 52卷

关键词：

initial stages of epitaxy; atomic force microscopy; layer-by-layer step flow and island growth mechanisms;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The initial stages of the growth of GaAs epitaxial layers by metalorganic vapor phase epitaxy have been studied by atomic force microscopy. The results demonstrate that the growth mechanism depends on the pressure in the deposition chamber (atmospheric or reduced to 104 Pa), which can be understood in terms of changes in the adsorption–desorption processes on the growth surface with the participation of hydrogen.

引用

页码：985 / 989

页数：4

共 25 条

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