Initial stages of gallium arsenide metalorganic vapor phase epitaxy

被引：0

作者：

P. B. Boldyrevskii

D. O. Filatov

I. A. Kazantseva

D. S. Smotrin

M. V. Revin

机构：

[1] Lobachevsky State University,

来源：

Inorganic Materials | 2016年 / 52卷

关键词：

initial stages of epitaxy; atomic force microscopy; layer-by-layer step flow and island growth mechanisms;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The initial stages of the growth of GaAs epitaxial layers by metalorganic vapor phase epitaxy have been studied by atomic force microscopy. The results demonstrate that the growth mechanism depends on the pressure in the deposition chamber (atmospheric or reduced to 104 Pa), which can be understood in terms of changes in the adsorption–desorption processes on the growth surface with the participation of hydrogen.

引用

页码：985 / 989

页数：4

共 25 条

[1]

Coleman J.J.(1997)Metalorganic chemical vapor deposition for optoelectronic devices Proc. IEEE 85 1715-1720

[2]

Spence J.C.H.(1999)The future of atomic resolution electron microscopy for materials science Mater. Sci. Eng. 26 1-49

[3]

Boldyrevskii P.B.(1984)Initial stages of the growth of homoepitaxial GaAs layers in the Ga(CH Izv. Akad. Nauk SSSR, Neorg. Mater. 20 1418-1420

[4]

Kudryavtseva R.V.(1999)) Rev. Mod. Phys. 71 324-330

[5]

Ovsetsina A.E.(1994)–AsH J. Cryst. Growth 145 113-119

[6]

Ivanov V.A.(1997)–H Mikroelektronika 26 163-167

[7]

Parshkov V.G.(1994) system J. Cryst. Growth 136 114-117

[8]

Binnig G.(1997)In touch with atoms J. Cryst. Growth 175–176 1102-undefined

[9]

Rohrer H.(undefined)Behavior and mechanism of wide terrace formation during metalorganic vapor phase epitaxy of GaAs and related materials undefined undefined undefined-undefined

[10]

Shinohara M.(undefined)Surface analysis by scanning force microscopy undefined undefined undefined-undefined

← 1 2 3 →