Modelling of transport phenomena and defects in crystal growth processes

被引：0
作者：
S. Pendurti
H. Zhang
V. Prasad
机构：
[1] State University of New York at Stony Brook,Consortium for Crystal Growth Research, Department of Mechanical Engineering
来源：
Sadhana | 2001年 / 26卷
关键词：
Transport phenomena; crystal growth defects; thermal stresses; multiple adaptive and generation; finite volume discretization;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A brief review of single crystal growth techniques and the associated problems is presented Emphasis is placed on models for various transport and defect phenorrem involved in the growth proces with the ultimate aim of intergrating them into a comprehensive mumerical model. The sources of dislocation nucleation in the growing erystal are discussed, and the propagation and multiplacation of these under the action of thermal stresses is discussed. A brief description of a high-level numerical technique based on multiple adaptive grid generation and finite volume diseretization is presented, followed by the result of a representative numerical simulation.
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页码：71 / 101
页数：30
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共 124 条
  • [1] Anselmo A(1993)Numerical and experimental study of a solid pellet feed continuous Czocjruisk growth process for silicon single crystals J. Cryst. Growth 131 247-264
  • [2] Prasad V(1987)Negative heat exchange in Czochralski growth J. Cryst. Growth 84 57-78
  • [3] Koziol J(1974)Meniscus in Czochralski growth J. Cryst. Growth 23 341-344
  • [4] Gupta K P(1966)Effect of arsenic pressure on dislocation densities in melt-growth galtium arsenide Nature (London) 209 1346-1346
  • [5] Atherton L(1988)Thery of transport processes in single crystal growth from the melt AIchE J. 34 881-911
  • [6] Derhy J J(1962)Velocities and densities of dislocations in Czochralski GaAs J. Cryst. Growth 61 111-111
  • [7] Brown R A(1997)The effect of interface shape on anisotropic thermal stress of bulk single crystals during Czochralski growth J. Cryst. Growth 173 367-379
  • [8] Bardsley W(1917)Ein neaes Verfahren are Messung der Kustallisation Gesehwindigkelt der Metalle Z. Phys. Chem. 92 219-221
  • [9] Frank F C(1987)Dislocations and plasticity in semiconductors. 1. Dislocation-structures and dynamics Rev. Phys. Appl. 22 941-966
  • [10] Green G(1983)An experimental model of the flow in Czochralski growth J. Cryst. Growth 61 235-244
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