Gamma-ray detectors based on GaAs<Cr> for nanostructural investigations

被引:0
|
作者
G. I. Ayzenshtat
D. L. Budnitskii
D. Yu. Mokeev
V. A. Novikov
E. M. Syresin
O. P. Tolbanov
A. V. Tyazhev
G. A. Shelkov
机构
[1] Tomsk State University,
[2] V. D. Kuznetsov Siberian Physical-Technical Institute of Tomsk State University,undefined
[3] Joint Institute for Nuclear Recearch,undefined
来源
Russian Physics Journal | 2008年 / 51卷
关键词
GaAs; Bias Voltage; Amplitude Spectrum; Semiconductor Detector; Nonequilibrium Charge Carrier;
D O I
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中图分类号
学科分类号
摘要
The progress in nanotechnologies has been largely due to the advent of a new generation of gamma-ray sources and position detectors, which can ensure both coordinate and temporal measurements within the nanoand femtoranges. The paper offers scientific and engineering solutions related to designing detector materials and structures for detecting single quanta of x- and γ-rays and high-energy charged particles. These are multielement position detectors of a new generation for nanostructure imaging and examination in gamma rays.
引用
收藏
页码:1037 / 1052
页数:15
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